MDIS5N50TH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDIS5N50TH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.2
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package: TO-251-VS
MDIS5N50TH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDIS5N50TH
Datasheet (PDF)
..1. Size:960K magnachip
mdis5n50th.pdf 
MDIS5N50 N-Channel MOSFET 500V, 4.4 A, 1.4General Description Features The MDIS5N50 uses advanced MagnaChips VDS = 500V MOSFET technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and ID = 4.4A @VGS = 10V excellent quality. RDS(ON) 1.4 @VGS = 10V MDIS5N50 is suitable device for SMPS, HID and general
..2. Size:321K inchange semiconductor
mdis5n50th.pdf
isc N-Channel MOSFET Transistor MDIS5N50THFEATURESDrain Current : I = 4.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.1. Size:1013K magnachip
mdis5n40th.pdf
MDIS5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDIS5N40 uses advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 3.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.6 @VGS = 10V excellent quality. MDIS5N40 is suitable device for SMPS, HID and general purpose application
8.2. Size:320K inchange semiconductor
mdis5n40th.pdf
isc N-Channel MOSFET Transistor MDIS5N40THFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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