Справочник MOSFET. MDIS5N50TH

 

MDIS5N50TH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MDIS5N50TH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-251-VS
 

 Аналог (замена) для MDIS5N50TH

   - подбор ⓘ MOSFET транзистора по параметрам

 

MDIS5N50TH Datasheet (PDF)

 ..1. Size:960K  magnachip
mdis5n50th.pdfpdf_icon

MDIS5N50TH

MDIS5N50 N-Channel MOSFET 500V, 4.4 A, 1.4General Description Features The MDIS5N50 uses advanced MagnaChips VDS = 500V MOSFET technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and ID = 4.4A @VGS = 10V excellent quality. RDS(ON) 1.4 @VGS = 10V MDIS5N50 is suitable device for SMPS, HID and general

 ..2. Size:321K  inchange semiconductor
mdis5n50th.pdfpdf_icon

MDIS5N50TH

isc N-Channel MOSFET Transistor MDIS5N50THFEATURESDrain Current : I = 4.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.1. Size:1013K  magnachip
mdis5n40th.pdfpdf_icon

MDIS5N50TH

MDIS5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDIS5N40 uses advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 3.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.6 @VGS = 10V excellent quality. MDIS5N40 is suitable device for SMPS, HID and general purpose application

 8.2. Size:320K  inchange semiconductor
mdis5n40th.pdfpdf_icon

MDIS5N50TH

isc N-Channel MOSFET Transistor MDIS5N40THFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Другие MOSFET... MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , MDIS4N65BTH , MDIS5N40TH , 75N75 , MDP10N50TH , MDP10N60GTH , MDP11N60TH , MDP12N50BTH , MDP12N50FTH , MDP13N50BTH , MDP13N50GTH , MDP14N25CTH .

History: IXFE55N50 | CM5N50 | FDD6612A | KF5N50PS | BLF6G20S-45 | IRC530A

 

 
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