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MDIS5N50TH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDIS5N50TH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-251-VS

 Аналог (замена) для MDIS5N50TH

 

 

MDIS5N50TH Datasheet (PDF)

 ..1. Size:960K  magnachip
 mdis5n50th.pdf

MDIS5N50TH MDIS5N50TH

MDIS5N50 N-Channel MOSFET 500V, 4.4 A, 1.4General Description Features The MDIS5N50 uses advanced MagnaChips VDS = 500V MOSFET technology, which provides low on-state VDS = 550V @ Tjmax resistance, high switching performance and ID = 4.4A @VGS = 10V excellent quality. RDS(ON) 1.4 @VGS = 10V MDIS5N50 is suitable device for SMPS, HID and general

 ..2. Size:321K  inchange semiconductor
 mdis5n50th.pdf

MDIS5N50TH MDIS5N50TH

isc N-Channel MOSFET Transistor MDIS5N50THFEATURESDrain Current : I = 4.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.1. Size:1013K  magnachip
 mdis5n40th.pdf

MDIS5N50TH MDIS5N50TH

MDIS5N40 N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDIS5N40 uses advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 3.4A @V = 10V D GSresistance, high switching performance and RDS(ON) 1.6 @VGS = 10V excellent quality. MDIS5N40 is suitable device for SMPS, HID and general purpose application

 8.2. Size:320K  inchange semiconductor
 mdis5n40th.pdf

MDIS5N50TH MDIS5N50TH

isc N-Channel MOSFET Transistor MDIS5N40THFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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