MDP15N60GTH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP15N60GTH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 231.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 258 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220
MDP15N60GTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP15N60GTH Datasheet (PDF)
mdf15n60gth mdp15n60gth.pdf
MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: EFC6612R-TF
History: EFC6612R-TF
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