MDP15N60GTH Datasheet and Replacement
Type Designator: MDP15N60GTH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 231.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 258 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220
MDP15N60GTH substitution
MDP15N60GTH Datasheet (PDF)
mdf15n60gth mdp15n60gth.pdf
MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui
Datasheet: MDP10N60GTH , MDP11N60TH , MDP12N50BTH , MDP12N50FTH , MDP13N50BTH , MDP13N50GTH , MDP14N25CTH , MDP14N25CTP , AO3400A , MDP16N50GTH , MDP1723TH , MDP18N50BTH , MDP1901TH , MDP1921TH , MDP1922TH , MDP1923TH , MDP1930TH .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SIF2N65D | HCD80R1K2
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