All MOSFET. MDP15N60GTH Datasheet

 

MDP15N60GTH Datasheet and Replacement


   Type Designator: MDP15N60GTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 231.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
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MDP15N60GTH Datasheet (PDF)

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MDP15N60GTH

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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