All MOSFET. MDP15N60GTH Datasheet

 

MDP15N60GTH Datasheet and Replacement


   Type Designator: MDP15N60GTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
 

 MDP15N60GTH substitution

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MDP15N60GTH Datasheet (PDF)

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MDP15N60GTH

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 15A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GSquality. Applications These devices are sui

Datasheet: MDP10N60GTH , MDP11N60TH , MDP12N50BTH , MDP12N50FTH , MDP13N50BTH , MDP13N50GTH , MDP14N25CTH , MDP14N25CTP , RU6888R , MDP16N50GTH , MDP1723TH , MDP18N50BTH , MDP1901TH , MDP1921TH , MDP1922TH , MDP1923TH , MDP1930TH .

History: NCE75H21T | 8N60G-TF3-T | IXTH240N055T | BLM06N10-B | HM6N80K | G10N80BF | RQ1A060ZPTR

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