MDP15N60GTH PDF and Equivalents Search

 

MDP15N60GTH Specs and Replacement

Type Designator: MDP15N60GTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86 nS

Cossⓘ - Output Capacitance: 258 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220

MDP15N60GTH substitution

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MDP15N60GTH datasheet

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 mdf15n60gth mdp15n60gth.pdf pdf_icon

MDP15N60GTH

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 15A @ V = 10V D GS state resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GS quality. Applications These devices are sui... See More ⇒

Detailed specifications: MDP10N60GTH, MDP11N60TH, MDP12N50BTH, MDP12N50FTH, MDP13N50BTH, MDP13N50GTH, MDP14N25CTH, MDP14N25CTP, AO3400A, MDP16N50GTH, MDP1723TH, MDP18N50BTH, MDP1901TH, MDP1921TH, MDP1922TH, MDP1923TH, MDP1930TH

Keywords - MDP15N60GTH MOSFET specs

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