MDP2N60TH PDF and Equivalents Search

 

MDP2N60TH Specs and Replacement

Type Designator: MDP2N60TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.6 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO-220

MDP2N60TH substitution

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MDP2N60TH datasheet

 ..1. Size:1080K  magnachip
 mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf pdf_icon

MDP2N60TH

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GS state resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM... See More ⇒

 7.1. Size:769K  cn minos
 mdp2n60 mdt2n60 mpf2n60.pdf pdf_icon

MDP2N60TH

600V N-Channel Power MOSFET Features PRODUCT SUMMARY R ... See More ⇒

Detailed specifications: MDP18N50BTH, MDP1901TH, MDP1921TH, MDP1922TH, MDP1923TH, MDP1930TH, MDP1932TH, MDP1933TH, AON7403, MDP2N60TP, MDP4N60TH, MDP4N60TP, MDP5N50BTH, MDP5N50FTH, MDP5N50ZTH, MDP6N60TH, MDP7N50BTH

Keywords - MDP2N60TH MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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