MDP2N60TH Datasheet and Replacement
Type Designator: MDP2N60TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29.6 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO-220
MDP2N60TH substitution
MDP2N60TH Datasheet (PDF)
mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf
MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM
mdp2n60 mdt2n60 mpf2n60.pdf
600V N-Channel Power MOSFETFeatures PRODUCT SUMMARY R
Datasheet: MDP18N50BTH , MDP1901TH , MDP1921TH , MDP1922TH , MDP1923TH , MDP1930TH , MDP1932TH , MDP1933TH , HY1906P , MDP2N60TP , MDP4N60TH , MDP4N60TP , MDP5N50BTH , MDP5N50FTH , MDP5N50ZTH , MDP6N60TH , MDP7N50BTH .
History: IXFX90N30 | SLH60R043E7D | KF5N53FS | D50N06 | IXUV170N075 | IRFP054PBF | MDF6N60BTH
Keywords - MDP2N60TH MOSFET datasheet
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History: IXFX90N30 | SLH60R043E7D | KF5N53FS | D50N06 | IXUV170N075 | IRFP054PBF | MDF6N60BTH
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