All MOSFET. MDP2N60TP Datasheet

 

MDP2N60TP Datasheet and Replacement


   Type Designator: MDP2N60TP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.6 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-220
 

 MDP2N60TP substitution

   - MOSFET ⓘ Cross-Reference Search

 

MDP2N60TP Datasheet (PDF)

 ..1. Size:1080K  magnachip
 mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf pdf_icon

MDP2N60TP

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

Datasheet: MDP1901TH , MDP1921TH , MDP1922TH , MDP1923TH , MDP1930TH , MDP1932TH , MDP1933TH , MDP2N60TH , IRF9640 , MDP4N60TH , MDP4N60TP , MDP5N50BTH , MDP5N50FTH , MDP5N50ZTH , MDP6N60TH , MDP7N50BTH , MDP7N60BTH .

History: SIHFP450

Keywords - MDP2N60TP MOSFET datasheet

 MDP2N60TP cross reference
 MDP2N60TP equivalent finder
 MDP2N60TP lookup
 MDP2N60TP substitution
 MDP2N60TP replacement

 

 
Back to Top

 


 
.