MDP4N60TP Datasheet and Replacement
Type Designator: MDP4N60TP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 92.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 58 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-220
MDP4N60TP substitution
MDP4N60TP Datasheet (PDF)
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable
Datasheet: MDP1922TH , MDP1923TH , MDP1930TH , MDP1932TH , MDP1933TH , MDP2N60TH , MDP2N60TP , MDP4N60TH , MMD60R360PRH , MDP5N50BTH , MDP5N50FTH , MDP5N50ZTH , MDP6N60TH , MDP7N50BTH , MDP7N60BTH , MDP7N60TH , MDP8N60TH .
History: FQB5N20TM | FDM30R650AN4G | MDP2N60TP | SIHFP450 | WFP640 | FQB4N80
Keywords - MDP4N60TP MOSFET datasheet
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History: FQB5N20TM | FDM30R650AN4G | MDP2N60TP | SIHFP450 | WFP640 | FQB4N80



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