MDQ16N50GTP PDF and Equivalents Search

 

MDQ16N50GTP Specs and Replacement

Type Designator: MDQ16N50GTP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88.5 nS

Cossⓘ - Output Capacitance: 226 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-247

MDQ16N50GTP substitution

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MDQ16N50GTP datasheet

 ..1. Size:813K  magnachip
 mdq16n50gth mdq16n50gtp.pdf pdf_icon

MDQ16N50GTP

MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35 General Description Features V = 500V DS These N-channel MOSFET are produced using advanced I = 16.5A @V = 10V D GS MagnaChip s MOSFET Technology, which provides low on- R 0.35 @V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are suitab... See More ⇒

 ..2. Size:328K  inchange semiconductor
 mdq16n50gtp.pdf pdf_icon

MDQ16N50GTP

isc N-Channel MOSFET Transistor MDQ16N50GTP FEATURES Drain Current I = 16.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

Detailed specifications: MDP6N60TH, MDP7N50BTH, MDP7N60BTH, MDP7N60TH, MDP8N60TH, MDP9N50BTH, MDP9N60TH, MDQ16N50GTH, 20N60, MDQ18N50GTH, MDQ18N50GTP, MDQ23N50DTP, MDS1521URH, MDS1524URH, MDS1525URH, MDS1526URH, MDS1527URH

Keywords - MDQ16N50GTP MOSFET specs

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