All MOSFET. MDS3754ARH Datasheet

 

MDS3754ARH Datasheet and Replacement


   Type Designator: MDS3754ARH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOIC-8
 

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MDS3754ARH Datasheet (PDF)

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MDS3754ARH

MDS3754A P-Channel Trench MOSFET, -40V, -6.0A, 45m General Description Features The MDS3754A uses advanced Magnachips Trench V = -40V DSMOSFET Technology to provided high performance in on- ID = -6.0 @ VGS = -10V state resistance, switching performance and reliability. R DS(ON)

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MDS3754ARH

MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30m General Description Features The MDS3753E uses advanced MagnaChips MOSFET V = -40V DSTechnology to provide low on-state resistance, high I = -7.1A @ V = 10V D GS switching performance and excellent reliability R DS(ON)

Datasheet: MDS1903URH , MDS1951URH , MDS3603URH , MDS3604URH , MDS3651URH , MDS3652URH , MDS3653URH , MDS3753EURH , 2N7000 , MDS5601URH , MDS5651URH , MDS5652URH , MDS5951URH , MDU1401SVRH , MDU1402VRH , MDU1511RH , MDU1512RH .

History: STW30NM50N | AOT12N60 | AP9962AGD | IRFD024PBF | PNMTOF600V4

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