IRFS620 Specs and Replacement

Type Designator: IRFS620

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

IRFS620 substitution

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IRFS620 datasheet

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 irfs620 irfs621.pdf pdf_icon

IRFS620

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 irfs620a.pdf pdf_icon

IRFS620

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IRFS620

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 irfs624b irf624b.pdf pdf_icon

IRFS620

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒

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Detailed specifications: IRFS540, IRFS540A, IRFS541, IRFS542, IRFS543, IRFS550A, IRFS610A, IRFS614A, 13N50, IRFS620A, IRFS622, IRFS624, IRFS624A, IRFS625, IRFS630, IRFS630A, IRFS632

Keywords - IRFS620 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.