All MOSFET. MDS5652URH Datasheet

 

MDS5652URH Datasheet and Replacement


   Type Designator: MDS5652URH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24.6 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOIC-8
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MDS5652URH Datasheet (PDF)

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MDS5652URH

MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, high I = 7.5A @V = 10V D GSswitching performance and exellent reliability. RDS(ON)

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MDS5652URH

MDS5651Dual N-Channel Trench MOSFET 30V, 7.5A, 26m General Description Features The MDS5651 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.5A @V = 10V D GSswitching performance and reliability RDS(ON)

 9.1. Size:673K  magnachip
mds5601urh.pdf pdf_icon

MDS5652URH

MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5mGeneral Description Features The MDS5601 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state ID = 12.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS5601 is suitable for DC/DC converter and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQD20N06LE | BRCS4606SC | ASDM3401ZB | SVS14N65FD2 | RQJ0302NGDQA | SVF8N70F | IRFM044

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