MDS5652URH PDF and Equivalents Search

 

MDS5652URH Specs and Replacement

Type Designator: MDS5652URH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.6 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOIC-8

MDS5652URH substitution

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MDS5652URH datasheet

 ..1. Size:750K  magnachip
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MDS5652URH

MDS5652 Dual N-Channel Trench MOSFET, 30V, 7.5A, 22m General Description Features The MDS5652 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, high I = 7.5A @V = 10V D GS switching performance and exellent reliability. RDS(ON) ... See More ⇒

 8.1. Size:696K  magnachip
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MDS5652URH

MDS5651 Dual N-Channel Trench MOSFET 30V, 7.5A, 26m General Description Features The MDS5651 uses advanced MagnaChip s trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.5A @V = 10V D GS switching performance and reliability RDS(ON) ... See More ⇒

 9.1. Size:673K  magnachip
 mds5601urh.pdf pdf_icon

MDS5652URH

MDS5601 Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m General Description Features The MDS5601 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state ID = 12.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS5601 is suitable for DC/DC converter and ... See More ⇒

Detailed specifications: MDS3604URH, MDS3651URH, MDS3652URH, MDS3653URH, MDS3753EURH, MDS3754ARH, MDS5601URH, MDS5651URH, 2N7002, MDS5951URH, MDU1401SVRH, MDU1402VRH, MDU1511RH, MDU1512RH, MDU1513URH, MDU1514URH, MDU1515URH

Keywords - MDS5652URH MOSFET specs

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