IRFS620A PDF and Equivalents Search

 

IRFS620A Specs and Replacement

Type Designator: IRFS620A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

IRFS620A substitution

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IRFS620A datasheet

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IRFS620A

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IRFS620A

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IRFS620A

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IRFS620A

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒

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Detailed specifications: IRFS540A, IRFS541, IRFS542, IRFS543, IRFS550A, IRFS610A, IRFS614A, IRFS620, AON7410, IRFS622, IRFS624, IRFS624A, IRFS625, IRFS630, IRFS630A, IRFS632, IRFS634

Keywords - IRFS620A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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