IRFS620A
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS620A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO220F
IRFS620A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS620A
Datasheet (PDF)
7.2. Size:881K 1
irf620b irfs620b.pdf 
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
8.1. Size:875K 1
irfs624b irf624b.pdf
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
8.4. Size:874K fairchild semi
irf624b irfs624b.pdf
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
8.5. Size:511K samsung
irfs624a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
Datasheet: IRFS540A
, IRFS541
, IRFS542
, IRFS543
, IRFS550A
, IRFS610A
, IRFS614A
, IRFS620
, RFP50N06
, IRFS622
, IRFS624
, IRFS624A
, IRFS625
, IRFS630
, IRFS630A
, IRFS632
, IRFS634
.
