Справочник MOSFET. IRFS620A

 

IRFS620A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS620A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFS620A

 

 

IRFS620A Datasheet (PDF)

 ..1. Size:211K  1
 irfs620a.pdf

IRFS620A IRFS620A

 7.1. Size:281K  1
 irfs620 irfs621.pdf

IRFS620A IRFS620A

 7.2. Size:881K  1
 irf620b irfs620b.pdf

IRFS620A IRFS620A

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 8.1. Size:875K  1
 irfs624b irf624b.pdf

IRFS620A IRFS620A

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

 8.2. Size:285K  1
 irfs624.pdf

IRFS620A IRFS620A

 8.3. Size:301K  1
 irfs624 irfs625.pdf

IRFS620A IRFS620A

 8.4. Size:874K  fairchild semi
 irf624b irfs624b.pdf

IRFS620A IRFS620A

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

 8.5. Size:511K  samsung
 irfs624a.pdf

IRFS620A IRFS620A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top