All MOSFET. MDU1722VRH Datasheet

 

MDU1722VRH Datasheet and Replacement


   Type Designator: MDU1722VRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 26.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.2 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PDFN56
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MDU1722VRH Datasheet (PDF)

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MDU1722VRH

MDU1722 Single N-channel Trench MOSFET 40V, 100A, 2.2m General Description Features The MDU1722 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1722 is suitable device for Synchronous

 8.1. Size:939K  magnachip
 mdu1721vrh.pdf pdf_icon

MDU1722VRH

MDU1721 Single N-channel Trench MOSFET 40V, 100A, 1.4m General Description Features The MDU1721 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1721 is suitable device for Synchronous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3192 | FQD4N25TM

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