All MOSFET. MDU1722VRH Datasheet

 

MDU1722VRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDU1722VRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 26.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.2 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PDFN56

 MDU1722VRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDU1722VRH Datasheet (PDF)

 ..1. Size:943K  magnachip
 mdu1722vrh.pdf

MDU1722VRH MDU1722VRH

MDU1722 Single N-channel Trench MOSFET 40V, 100A, 2.2m General Description Features The MDU1722 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1722 is suitable device for Synchronous

 8.1. Size:939K  magnachip
 mdu1721vrh.pdf

MDU1722VRH MDU1722VRH

MDU1721 Single N-channel Trench MOSFET 40V, 100A, 1.4m General Description Features The MDU1721 uses advanced MagnaChips MOSFET V = 40V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1721 is suitable device for Synchronous

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History: FTD220 | 2N7002PT | IXFQ80N25X3 | WFF2N60B | FHP1404A | OSG90R1K2AF | APQ16SN06AA

 

 
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