IRFS622 Specs and Replacement
Type Designator: IRFS622
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
IRFS622 substitution
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IRFS622 datasheet
irfs624b irf624b.pdf
November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒
Detailed specifications: IRFS541, IRFS542, IRFS543, IRFS550A, IRFS610A, IRFS614A, IRFS620, IRFS620A, 12N60, IRFS624, IRFS624A, IRFS625, IRFS630, IRFS630A, IRFS632, IRFS634, IRFS634A
Keywords - IRFS622 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDB12N50U
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