Справочник MOSFET. IRFS622

 

IRFS622 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS622
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFS622

 

 

IRFS622 Datasheet (PDF)

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 irfs620a.pdf

IRFS622 IRFS622

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 irfs624b irf624b.pdf

IRFS622 IRFS622

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

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 irfs620 irfs621.pdf

IRFS622 IRFS622

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 irfs624.pdf

IRFS622 IRFS622

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 irf620b irfs620b.pdf

IRFS622 IRFS622

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

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 irfs624 irfs625.pdf

IRFS622 IRFS622

 8.7. Size:874K  fairchild semi
 irf624b irfs624b.pdf

IRFS622 IRFS622

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

 8.8. Size:511K  samsung
 irfs624a.pdf

IRFS622 IRFS622

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

Другие MOSFET... IRFS541 , IRFS542 , IRFS543 , IRFS550A , IRFS610A , IRFS614A , IRFS620 , IRFS620A , CS150N03A8 , IRFS624 , IRFS624A , IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A .

 

 
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