IRFS624 Specs and Replacement

Type Designator: IRFS624

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO220F

IRFS624 substitution

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IRFS624 datasheet

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 irfs624.pdf pdf_icon

IRFS624

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IRFS624

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IRFS624

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒

 0.2. Size:874K  fairchild semi
 irf624b irfs624b.pdf pdf_icon

IRFS624

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒

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Detailed specifications: IRFS542, IRFS543, IRFS550A, IRFS610A, IRFS614A, IRFS620, IRFS620A, IRFS622, 5N65, IRFS624A, IRFS625, IRFS630, IRFS630A, IRFS632, IRFS634, IRFS634A, IRFS635

Keywords - IRFS624 MOSFET specs

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