IRFS624A Datasheet and Replacement
Type Designator: IRFS624A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO220F
IRFS624A substitution
IRFS624A Datasheet (PDF)
irfs624a.pdf

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
irfs624b irf624b.pdf

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
Datasheet: IRFS543 , IRFS550A , IRFS610A , IRFS614A , IRFS620 , IRFS620A , IRFS622 , IRFS624 , IRF530 , IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 .
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