All MOSFET. MDV3604URH Datasheet

 

MDV3604URH Datasheet and Replacement


   Type Designator: MDV3604URH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 12.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.9 nS
   Cossⓘ - Output Capacitance: 338 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN33
 

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MDV3604URH Datasheet (PDF)

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MDV3604URH

MDV3604Single P-Channel Trench MOSFET, -30V, -20A, 12.1m General Description Features The MDV3604 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. I = -20A @V = -10V D GS RDS(ON) This device is suited for Power Management and load

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MDV3604URH

MDV3605Single P-Channel Trench MOSFET, -30V, -20A, 18.0m General Description Features The MDV3605 uses advanced MagnaChips MOSFET VDS = -30V Technology to provide low on-state resistance. ID = -20A @VGS = -10V RDS(ON) This device is suited for Power Management and load

Datasheet: MDV1526URH , MDV1527URH , MDV1528URH , MDV1529EURH , MDV1542URH , MDV1545URH , MDV1548URH , MDV1595SURH , CS150N03A8 , MDV3605URH , MDV5524URH , MDZ1N60UMH , 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C .

History: IRFU4104PBF | UF830L-T2Q-T | HY1310D | RSD140P06 | HGT025N10A | SI1414DH | RS1E130GN

Keywords - MDV3604URH MOSFET datasheet

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