MMD50R380P MOSFET Datasheet: N-Ch, 500V, 11A. Full specification with pinout and replacement list

MMD50R380P Specs and Replacement

Type Designator: MMD50R380P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 357 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-252

MMD50R380P substitution

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MMD50R380P datasheet

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MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

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0.2. Size:309K inchange semiconductor
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isc N-Channel MOSFET Transistor MMD50R380PRH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

Detailed specifications: MDZ1N60UMH, 2SK3979, 2SK4118LS, CEP50N06, CEB50N06, FQP16N25C, HY1607P, ME15N10, IRF1405, PDC4801R, PMF250XN, TK10A60W, MSD20N06, MSD20N10, MSD23N22, MSD23N58, MSD2N60