MMD50R380P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMD50R380P
Маркировка: 50R380
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 21.8 nC
trⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 357 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
MMD50R380P Datasheet (PDF)
mmd50r380p.pdf

MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmd50r380prh.pdf

MMD50R380P Datasheet MMD50R380P 500V 0.38 N-channel MOSFET Description MMD50R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmd50r380prh.pdf

isc N-Channel MOSFET Transistor MMD50R380PRHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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