All MOSFET. PDC4801R Datasheet

 

PDC4801R MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDC4801R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 39 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PPAK5X6

 PDC4801R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDC4801R Datasheet (PDF)

 ..1. Size:986K  potens
 pdc4801r.pdf

PDC4801R PDC4801R

40V N-Channel MOSFETs PDC4801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 40V 13m 39A advanced technology has been especially tailored to Q2 40V 6.8m 60A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top