All MOSFET. PDC4801R Datasheet

 

PDC4801R Datasheet and Replacement


   Type Designator: PDC4801R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PPAK5X6
 

 PDC4801R substitution

   - MOSFET ⓘ Cross-Reference Search

 

PDC4801R Datasheet (PDF)

 ..1. Size:986K  potens
 pdc4801r.pdf pdf_icon

PDC4801R

40V N-Channel MOSFETs PDC4801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 40V 13m 39A advanced technology has been especially tailored to Q2 40V 6.8m 60A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features

Datasheet: 2SK3979 , 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P , MMIS60R580P , PMF250XN , TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , MSD2N70 .

History: HGP030N10S | 2SK578 | RJK1590DP3-A0 | CS5N65A3 | TPCA8008-H | NCE70N900I | GSM6424

Keywords - PDC4801R MOSFET datasheet

 PDC4801R cross reference
 PDC4801R equivalent finder
 PDC4801R lookup
 PDC4801R substitution
 PDC4801R replacement

 

 
Back to Top

 


 
.