PDC4801R PDF and Equivalents Search

 

PDC4801R Specs and Replacement

Type Designator: PDC4801R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PPAK5X6

PDC4801R substitution

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PDC4801R datasheet

 ..1. Size:986K  potens
 pdc4801r.pdf pdf_icon

PDC4801R

40V N-Channel MOSFETs PDC4801R General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 40V 13m 39A advanced technology has been especially tailored to Q2 40V 6.8m 60A minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the Features ... See More ⇒

Detailed specifications: 2SK3979, 2SK4118LS, CEP50N06, CEB50N06, FQP16N25C, HY1607P, ME15N10, MMD50R380P, 7N60, PMF250XN, TK10A60W, MSD20N06, MSD20N10, MSD23N22, MSD23N58, MSD2N60, MSD2N70

Keywords - PDC4801R MOSFET specs

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