PMF250XN Datasheet and Replacement
Type Designator: PMF250XN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT323
PMF250XN substitution
PMF250XN Datasheet (PDF)
pmf250xn.pdf

PMF250XN30 V, 0.9 A N-channel Trench MOSFETRev. 1 7 December 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas
pmf250xne.pdf

PMF250XNE30V N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch
Datasheet: 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P , PDC4801R , 60N06 , TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , MSD2N70 , MSD30N06 .
History: FDMS7650DC | 2SK596S | FIR10N65FG | CEP50N06 | SGSP575 | FDMS86105 | H5N2005DS
Keywords - PMF250XN MOSFET datasheet
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History: FDMS7650DC | 2SK596S | FIR10N65FG | CEP50N06 | SGSP575 | FDMS86105 | H5N2005DS



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