All MOSFET. PMF250XN Datasheet

 

PMF250XN Datasheet and Replacement


   Type Designator: PMF250XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT323
 

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PMF250XN Datasheet (PDF)

 ..1. Size:870K  nxp
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PMF250XN

PMF250XN30 V, 0.9 A N-channel Trench MOSFETRev. 1 7 December 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas

 0.1. Size:714K  nxp
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PMF250XN

PMF250XNE30V N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

Datasheet: 2SK4118LS , CEP50N06 , CEB50N06 , FQP16N25C , HY1607P , ME15N10 , MMD50R380P , PDC4801R , RU7088R , TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , MSD2N70 , MSD30N06 .

History: RJK2075DPA

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