PMF250XN MOSFET Datasheet: N-Ch, 30V, 0.9A. Full specification with pinout and replacement list

PMF250XN Specs and Replacement

Type Designator: PMF250XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.275 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT323

PMF250XN substitution

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PMF250XN datasheet

..1. Size:870K nxp
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PMF250XN 30 V, 0.9 A N-channel Trench MOSFET Rev. 1 7 December 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas... See More ⇒

0.1. Size:714K nxp
pmf250xne.pdf pdf_icon

PMF250XNE 30V N-channel Trench MOSFET 28 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch... See More ⇒

Detailed specifications: 2SK4118LS, CEP50N06, CEB50N06, FQP16N25C, HY1607P, ME15N10, MMD50R380P, PDC4801R, IRFZ48N, TK10A60W, MSD20N06, MSD20N10, MSD23N22, MSD23N58, MSD2N60, MSD2N70, MSD30N06