All MOSFET. IRFS630 Datasheet

 

IRFS630 Datasheet and Replacement


   Type Designator: IRFS630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50(max) nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220F
 

 IRFS630 substitution

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IRFS630 Datasheet (PDF)

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 irfs630 irfs631.pdf pdf_icon

IRFS630

 0.1. Size:859K  1
 irf630b irfs630b.pdf pdf_icon

IRFS630

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

 0.2. Size:508K  samsung
 irfs630a.pdf pdf_icon

IRFS630

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

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 irfs634.pdf pdf_icon

IRFS630

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Datasheet: IRFS610A , IRFS614A , IRFS620 , IRFS620A , IRFS622 , IRFS624 , IRFS624A , IRFS625 , IRLZ44N , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRFS642 .

History: PE532DY | OSG60R1K8PF

Keywords - IRFS630 MOSFET datasheet

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