MSD40P03 Specs and Replacement
Type Designator: MSD40P03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-252
MSD40P03 substitution
- MOSFET ⓘ Cross-Reference Search
MSD40P03 datasheet
msd40p03.pdf
Bruckewell Technology Corp., Ltd. MSD40P03 P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards... See More ⇒
Detailed specifications: MSD20N06, MSD20N10, MSD23N22, MSD23N58, MSD2N60, MSD2N70, MSD30N06, MSD30P06, MMIS60R580P, MSD4N40, MSD4N60, MSD4N70, MSD50N03, MSD50N10, MSD80N03, MSE20N06N, MSF10N40
Keywords - MSD40P03 MOSFET specs
MSD40P03 cross reference
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MSD40P03 substitution
MSD40P03 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SM4029NSU | AP4502GM | SMK1820FJ | DG2N65-252 | 2SK1237 | CM20N50F | FDMS7570S
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