All MOSFET. MSD40P03 Datasheet

 

MSD40P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSD40P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15.3 nC
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252

 MSD40P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSD40P03 Datasheet (PDF)

 ..1. Size:523K  bruckewell
 msd40p03.pdf

MSD40P03 MSD40P03

Bruckewell Technology Corp., Ltd. MSD40P03 P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEP730G

 

 
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