MSD4N60 Specs and Replacement
Type Designator: MSD4N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-252
MSD4N60 substitution
- MOSFET ⓘ Cross-Reference Search
MSD4N60 datasheet
msd4n60.pdf
MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme... See More ⇒
Detailed specifications: MSD23N22, MSD23N58, MSD2N60, MSD2N70, MSD30N06, MSD30P06, MSD40P03, MSD4N40, AO4407A, MSD4N70, MSD50N03, MSD50N10, MSD80N03, MSE20N06N, MSF10N40, MSF10N60, MSF10N65
Keywords - MSD4N60 MOSFET specs
MSD4N60 cross reference
MSD4N60 equivalent finder
MSD4N60 pdf lookup
MSD4N60 substitution
MSD4N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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