MSD50N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: MSD50N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-252
MSD50N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSD50N03 Datasheet (PDF)
msd50n03.pdf
Bruckewell Technology Corp., Ltd. MSD50N03 N-Channel Logic Level Enhancement Mode Power MOSFET FEATURES VDS=30V, ID=50A, RDS(ON)=9m Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Absolute Maximum Ratings (Tc=25C unless otherwise noted) Parameter Symbol Value Unit Drai
msd50n10.pdf
MSD50N10 N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cor
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