All MOSFET. MSD50N03 Datasheet

 

MSD50N03 Datasheet and Replacement


   Type Designator: MSD50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

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MSD50N03 Datasheet (PDF)

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MSD50N03

Bruckewell Technology Corp., Ltd. MSD50N03 N-Channel Logic Level Enhancement Mode Power MOSFET FEATURES VDS=30V, ID=50A, RDS(ON)=9m Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Absolute Maximum Ratings (Tc=25C unless otherwise noted) Parameter Symbol Value Unit Drai

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MSD50N03

MSD50N10 N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cor

Datasheet: MSD2N60 , MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , 5N50 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A .

History: BLP03N08-P

Keywords - MSD50N03 MOSFET datasheet

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