MSD50N10 MOSFET Datasheet: N-Ch, 100V, 44A. Full specification with pinout and replacement list

MSD50N10 Specs and Replacement

Type Designator: MSD50N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-252

MSD50N10 substitution

- MOSFET ⓘ Cross-Reference Search

MSD50N10 datasheet

..1. Size:229K bruckewell
msd50n10.pdf pdf_icon

MSD50N10 N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cor... See More ⇒

8.1. Size:532K bruckewell
msd50n03.pdf pdf_icon

Bruckewell Technology Corp., Ltd. MSD50N03 N-Channel Logic Level Enhancement Mode Power MOSFET FEATURES VDS=30V, ID=50A, RDS(ON)=9m Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Parameter Symbol Value Unit Drai... See More ⇒

Detailed specifications: MSD2N70, MSD30N06, MSD30P06, MSD40P03, MSD4N40, MSD4N60, MSD4N70, MSD50N03, AO4468, MSD80N03, MSE20N06N, MSF10N40, MSF10N60, MSF10N65, MSF10N80, MSF10N80A, MSF12N60