All MOSFET. MSD50N10 Datasheet

 

MSD50N10 Datasheet and Replacement


   Type Designator: MSD50N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-252
 

 MSD50N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MSD50N10 Datasheet (PDF)

 ..1. Size:229K  bruckewell
 msd50n10.pdf pdf_icon

MSD50N10

MSD50N10 N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cor

 8.1. Size:532K  bruckewell
 msd50n03.pdf pdf_icon

MSD50N10

Bruckewell Technology Corp., Ltd. MSD50N03 N-Channel Logic Level Enhancement Mode Power MOSFET FEATURES VDS=30V, ID=50A, RDS(ON)=9m Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Absolute Maximum Ratings (Tc=25C unless otherwise noted) Parameter Symbol Value Unit Drai

Datasheet: MSD2N70 , MSD30N06 , MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 , IRFP064N , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 .

History: SWP072R08ET | LND06R079 | AFP2309 | UML2502G-AE3-R | IPD180N10N3G | HGK110N20S | BLS60R150-P

Keywords - MSD50N10 MOSFET datasheet

 MSD50N10 cross reference
 MSD50N10 equivalent finder
 MSD50N10 lookup
 MSD50N10 substitution
 MSD50N10 replacement

 

 
Back to Top

 


 
.