MSE20N06N Datasheet and Replacement
Type Designator: MSE20N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT-26
MSE20N06N substitution
MSE20N06N Datasheet (PDF)
mse20n06n.pdf
Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited
Datasheet: MSD30P06 , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 , MSD80N03 , IRFZ44N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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