MSE20N06N Datasheet. Specs and Replacement

Type Designator: MSE20N06N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT-26

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MSE20N06N datasheet

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MSE20N06N

Bruckewell Technology Corp., Ltd. MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited ... See More ⇒

Detailed specifications: MSD30P06, MSD40P03, MSD4N40, MSD4N60, MSD4N70, MSD50N03, MSD50N10, MSD80N03, IRFZ44N, MSF10N40, MSF10N60, MSF10N65, MSF10N80, MSF10N80A, MSF12N60, MSF12N65, MSF13N50

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