All MOSFET. MSF10N80 Datasheet

 

MSF10N80 Datasheet and Replacement


   Type Designator: MSF10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220F
 

 MSF10N80 substitution

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MSF10N80 Datasheet (PDF)

 ..1. Size:841K  bruckewell
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MSF10N80

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn

 0.1. Size:1058K  bruckewell
msf10n80a.pdf pdf_icon

MSF10N80

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int

 8.1. Size:189K  motorola
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MSF10N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which10 AMPERESutilize Motorolas High Cell Density HDTMOS process a

 8.2. Size:201K  motorola
mmsf10n03z.pdf pdf_icon

MSF10N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESD Protected GateSINGLE TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize10 AMPERESMotorolas High Cell Density TMOS process and conta

Datasheet: MSD4N70 , MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , 20N60 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 .

History: AM20N15-250B | TF2333 | H7N1005LS | VBA3638 | HM2302KR | HGB043N15S | FDN338P-NL

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