MSF10N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: MSF10N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 150 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO-220F

MSF10N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MSF10N80 Datasheet (PDF)

1.1. msf10n80.pdf Size:841K _upd-mosfet

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • 100% EAS Test • Rugged Gate Oxide Techn

1.2. msf10n80a.pdf Size:1058K _upd-mosfet

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Int

1.3. msf10n80.pdf Size:841K _bruckewell