Справочник MOSFET. MSF10N80

 

MSF10N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MSF10N80
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 46 nC
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MSF10N80

 

 

MSF10N80 Datasheet (PDF)

 ..1. Size:841K  bruckewell
msf10n80.pdf

MSF10N80 MSF10N80

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Techn

 0.1. Size:1058K  bruckewell
msf10n80a.pdf

MSF10N80 MSF10N80

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Int

 8.1. Size:189K  motorola
mmsf10n02z.pdf

MSF10N80 MSF10N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which10 AMPERESutilize Motorolas High Cell Density HDTMOS process a

 8.2. Size:201K  motorola
mmsf10n03z.pdf

MSF10N80 MSF10N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESD Protected GateSINGLE TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize10 AMPERESMotorolas High Cell Density TMOS process and conta

 8.3. Size:184K  motorola
mmsf10n02zrev2.pdf

MSF10N80 MSF10N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N02Z/DDesigner's Data SheetMMSF10N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which10 AMPERESutilize Motorolas High Cell Density HDTMOS process a

 8.4. Size:196K  motorola
mmsf10n03zrev0.pdf

MSF10N80 MSF10N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF10N03Z/DAdvance InformationMMSF10N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESD Protected GateSINGLE TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize10 AMPERESMotorolas High Cell Density TMOS process and conta

 8.5. Size:1078K  bruckewell
msf10n65.pdf

MSF10N80 MSF10N80

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

 8.6. Size:1096K  bruckewell
msf10n40.pdf

MSF10N80 MSF10N80

MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intri

 8.7. Size:907K  bruckewell
msf10n60.pdf

MSF10N80 MSF10N80

MSF10N60 N-Channel 600V MOSFET Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The ITO-220AB package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requ

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