MSF12N65 Datasheet and Replacement
Type Designator: MSF12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 182 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220F
MSF12N65 substitution
MSF12N65 Datasheet (PDF)
msf12n65.pdf

MSF12N65 650V N-Channel MOSFET Description The MSF12N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low gate charge ( typical 52nC) High
msf12n60.pdf

MSF12N60 600V N-Channel MOSFET Description The MSF12N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir
Datasheet: MSD80N03 , MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , 50N06 , MSF13N50 , MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 .
History: HAT2160N | PE552BA | CS12N60A8R | AO2301 | STD4N62K3 | PT530BA | BL8N100-F
Keywords - MSF12N65 MOSFET datasheet
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History: HAT2160N | PE552BA | CS12N60A8R | AO2301 | STD4N62K3 | PT530BA | BL8N100-F



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