All MOSFET. MSF13N50 Datasheet

 

MSF13N50 Datasheet and Replacement


   Type Designator: MSF13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220F
 

 MSF13N50 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MSF13N50 Datasheet (PDF)

 ..1. Size:854K  bruckewell
 msf13n50.pdf pdf_icon

MSF13N50

MSF13N50 500V N-Channel MOSFET Description The MSF13N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.48 )@VGS=10V Ga

Datasheet: MSE20N06N , MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , IRF640 , MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 .

History: SI4622DY | VBZL80N03

Keywords - MSF13N50 MOSFET datasheet

 MSF13N50 cross reference
 MSF13N50 equivalent finder
 MSF13N50 lookup
 MSF13N50 substitution
 MSF13N50 replacement

 

 
Back to Top

 


 
.