All MOSFET. MSF14N60 Datasheet

 

MSF14N60 Datasheet and Replacement


   Type Designator: MSF14N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220F
 

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MSF14N60 Datasheet (PDF)

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MSF14N60

MSF14N60 N-Channel Enhancement Mode Power MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

Datasheet: MSF10N40 , MSF10N60 , MSF10N65 , MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 , IRF640 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 .

History: STP120NF10 | AP4800AGM | BUZ84 | VS3620GEMC | GC11N70F

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