MSF3N80 Datasheet and Replacement
Type Designator: MSF3N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-220F
MSF3N80 substitution
MSF3N80 Datasheet (PDF)
msf3n80.pdf

MSF3N80 800V N-Channel MOSFET Description The MSF3N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 4.8 )@VGS=10V Gate Char
mmsf3n03hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N03HD/DAdvance InformationMTSF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to 3.7 AMPERESachieve lo
mmsf3n02hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N02HD/DAdvance InformationMTSF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to 3.8 AMPERESachieve lo
Datasheet: MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , AON6414A , MSF4N60 , MSF4N60L , MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 , MSF6N60 , MSF6N65 .
History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N
Keywords - MSF3N80 MOSFET datasheet
MSF3N80 cross reference
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History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N



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