MSF3N80 Datasheet. Specs and Replacement

Type Designator: MSF3N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220F

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MSF3N80 substitution

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MSF3N80 datasheet

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MSF3N80

MSF3N80 800V N-Channel MOSFET Description The MSF3N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 4.8 )@VGS=10V Gate Char... See More ⇒

 9.1. Size:309K  motorola
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MSF3N80

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTSF3N03HD/D Advance Information MTSF3N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistor SINGLE TMOS Micro8 devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process to 3.7 AMPERES achieve lo... See More ⇒

 9.2. Size:317K  motorola
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MSF3N80

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTSF3N02HD/D Advance Information MTSF3N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistor SINGLE TMOS Micro8 devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process to 3.8 AMPERES achieve lo... See More ⇒

Detailed specifications: MSF14N60, MSF15N60, MSF16N50, MSF18N50, MSF20N50, MSF2N40, MSF2N60, MSF2N70, IRFB4227, MSF4N60, MSF4N60L, MSF4N65, MSF5N50, MSF5N60, MSF6N40, MSF6N60, MSF6N65

Keywords - MSF3N80 MOSFET specs

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