All MOSFET. MSF7N60 Datasheet

 

MSF7N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSF7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 121.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220F

 MSF7N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSF7N60 Datasheet (PDF)

 ..1. Size:741K  bruckewell
 msf7n60.pdf

MSF7N60 MSF7N60

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 8.1. Size:1111K  bruckewell
 msf7n65.pdf

MSF7N60 MSF7N60

MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requi

 9.1. Size:253K  motorola
 mmsf7n03hd.pdf

MSF7N60 MSF7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V

 9.2. Size:193K  motorola
 mmsf7n03zrev0.pdf

MSF7N60 MSF7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03Z/DDesigner's Data SheetMMSF7N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERESMotorolas High Cell Density TMOS process and

 9.3. Size:296K  motorola
 mmsf7n03hdrev3.pdf

MSF7N60 MSF7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V

 9.4. Size:851K  bruckewell
 msf7n80.pdf

MSF7N60 MSF7N60

MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6793-SM

 

 
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