MSF7N60 - описание и поиск аналогов

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requi

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03HD/D Designer's Data Sheet MMSF7N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03Z/D Designer's Data Sheet MMSF7N03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD SINGLE TMOS Protected Gate POWER MOSFET EZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERES Motorola s High Cell Density TMOS process and

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7N03HD/D Designer's Data Sheet MMSF7N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 30 V

MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins