Справочник MOSFET. MSF7N60

 

MSF7N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MSF7N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 121.7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MSF7N60

 

 

MSF7N60 Datasheet (PDF)

 ..1. Size:741K  bruckewell
 msf7n60.pdf

MSF7N60 MSF7N60

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 8.1. Size:1111K  bruckewell
 msf7n65.pdf

MSF7N60 MSF7N60

MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requi

 9.1. Size:253K  motorola
 mmsf7n03hd.pdf

MSF7N60 MSF7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V

 9.2. Size:193K  motorola
 mmsf7n03zrev0.pdf

MSF7N60 MSF7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03Z/DDesigner's Data SheetMMSF7N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERESMotorolas High Cell Density TMOS process and

 9.3. Size:296K  motorola
 mmsf7n03hdrev3.pdf

MSF7N60 MSF7N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V

 9.4. Size:851K  bruckewell
 msf7n80.pdf

MSF7N60 MSF7N60

MSF7N80 800V N-Channel MOSFET Description The MSF7N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top