MSF7N60 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MSF7N60
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 121.7 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MSF7N60
MSF7N60 Datasheet (PDF)
msf7n60.pdf

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem
msf7n65.pdf

MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requi
mmsf7n03hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03HD/DDesigner's Data SheetMMSF7N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 8.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 V
mmsf7n03zrev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7N03Z/DDesigner's Data SheetMMSF7N03ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 7.5 AMPERESMotorolas High Cell Density TMOS process and
Другие MOSFET... MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 , MSF6N60 , MSF6N65 , MSF6N70 , MSF6N90 , K3569 , MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 , MSF8N80 , MSF9N20 , MSF9N70 , MSF9N90 .
History: 14N50G-TQ2-T | CHM25N15LPAGP | AP80T10GP-HF
History: 14N50G-TQ2-T | CHM25N15LPAGP | AP80T10GP-HF



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