IRFS634A PDF and Equivalents Search

 

IRFS634A Specs and Replacement

Type Designator: IRFS634A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO220F

IRFS634A substitution

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IRFS634A datasheet

 ..1. Size:505K  samsung
irfs634a.pdf pdf_icon

IRFS634A

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

 7.1. Size:277K  1
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IRFS634A

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 7.2. Size:296K  1
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IRFS634A

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 7.3. Size:858K  fairchild semi
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IRFS634A

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Detailed specifications: IRFS622 , IRFS624 , IRFS624A , IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , AON7506 , IRFS635 , IRFS640 , IRFS640A , IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A .

Keywords - IRFS634A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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