MSF8N50 Datasheet. Specs and Replacement

Type Designator: MSF8N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

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MSF8N50 substitution

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MSF8N50 datasheet

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MSF8N50

MSF8N50 500V N-Channel MOSFET Description The MSF8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 C Low On... See More ⇒

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MSF8N50

MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (typ 1.3 )@VGS=10V Gate Char... See More ⇒

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MSF8N50

MSF8N60 N-Channel Enhancement Mode Power MOSFET Description The MSF8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim... See More ⇒

Detailed specifications: MSF6N40, MSF6N60, MSF6N65, MSF6N70, MSF6N90, MSF7N60, MSF7N65, MSF7N80, STP75NF75, MSF8N60, MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3, MSK2N60F

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