All MOSFET. MSF9N20 Datasheet

 

MSF9N20 Datasheet and Replacement


   Type Designator: MSF9N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 15.8 nC
   tr ⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-220F
 

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MSF9N20 Datasheet (PDF)

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MSF9N20

MSF9N20 N-Channel 200-V (D-S) MOSFET Description The MSF9N20 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low RDS(on) trench technology Lo

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MSF9N20

MSF9N90 900V N-Channel MOSFET Description The MSF9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 1.4 )@VGS=10V Gate Charg

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History: 18N65 | FQPF65N06

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