MSF9N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: MSF9N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15.8 nC
trⓘ - Rise Time: 17.6 nS
Cossⓘ - Output Capacitance: 81 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-220F
MSF9N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSF9N20 Datasheet (PDF)
msf9n20.pdf
MSF9N20 N-Channel 200-V (D-S) MOSFET Description The MSF9N20 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low RDS(on) trench technology Lo
msf9n90.pdf
MSF9N90 900V N-Channel MOSFET Description The MSF9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 1.4 )@VGS=10V Gate Charg
Datasheet: MSF6N70 , MSF6N90 , MSF7N60 , MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 , MSF8N80 , 2SK3568 , MSF9N70 , MSF9N90 , MSK19N03 , MSK1N3 , MSK2N60F , MSK2N60T , MSK4D5N60F , MSK4D5N60T .
