All MOSFET. MSF9N90 Datasheet

 

MSF9N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: MSF9N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-220F

MSF9N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MSF9N90 Datasheet (PDF)

1.1. msf9n90.pdf Size:811K _upd-mosfet

MSF9N90 MSF9N90

MSF9N90 900V N-Channel MOSFET Description The MSF9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (Max 1.4 Ω )@VGS=10V • Gate Charg

5.1. msf9n20.pdf Size:609K _upd-mosfet

MSF9N90 MSF9N90

MSF9N20 N-Channel 200-V (D-S) MOSFET Description The MSF9N20 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low RDS(on) trench technology • Lo

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