All MOSFET. MSF9N90 Datasheet

 

MSF9N90 Datasheet and Replacement


   Type Designator: MSF9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
 

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MSF9N90 Datasheet (PDF)

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MSF9N90

MSF9N90 900V N-Channel MOSFET Description The MSF9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 1.4 )@VGS=10V Gate Charg

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MSF9N90

MSF9N20 N-Channel 200-V (D-S) MOSFET Description The MSF9N20 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low RDS(on) trench technology Lo

Datasheet: MSF7N60 , MSF7N65 , MSF7N80 , MSF8N50 , MSF8N60 , MSF8N80 , MSF9N20 , MSF9N70 , AO3400 , MSK19N03 , MSK1N3 , MSK2N60F , MSK2N60T , MSK4D5N60F , MSK4D5N60T , MSK4N80F , MSK4N80T .

History: NVMTS0D6N04C

Keywords - MSF9N90 MOSFET datasheet

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