All MOSFET. MSK2N60F Datasheet

 

MSK2N60F Datasheet and Replacement


   Type Designator: MSK2N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 59.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220F
 

 MSK2N60F substitution

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MSK2N60F Datasheet (PDF)

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MSK2N60F

600V/2.0A N-Channel MOSFET MSK2N60T/F600V/2.0A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220Features VDSS=600V, ID=2.0A; Low Drain-Source ON Resistance: RDS(ON) =5.0 @ VGS=10V Qg(typ.)=10.9nC RoHS C

Datasheet: MSF8N50 , MSF8N60 , MSF8N80 , MSF9N20 , MSF9N70 , MSF9N90 , MSK19N03 , MSK1N3 , 2SK3568 , MSK2N60T , MSK4D5N60F , MSK4D5N60T , MSK4N80F , MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F .

History: IPW80R290C3A | AP01L60T-HF

Keywords - MSK2N60F MOSFET datasheet

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