MSK2N60F MOSFET. Datasheet pdf. Equivalent
Type Designator: MSK2N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.7 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 59.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-220F
MSK2N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSK2N60F Datasheet (PDF)
..1. Size:663K taitron
msk2n60f msk2n60t.pdf
msk2n60f msk2n60t.pdf
600V/2.0A N-Channel MOSFET MSK2N60T/F600V/2.0A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220Features VDSS=600V, ID=2.0A; Low Drain-Source ON Resistance: RDS(ON) =5.0 @ VGS=10V Qg(typ.)=10.9nC RoHS C
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
