MSK2N60F Datasheet and Replacement
Type Designator: MSK2N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 59.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-220F
MSK2N60F substitution
MSK2N60F Datasheet (PDF)
msk2n60f msk2n60t.pdf
600V/2.0A N-Channel MOSFET MSK2N60T/F600V/2.0A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220Features VDSS=600V, ID=2.0A; Low Drain-Source ON Resistance: RDS(ON) =5.0 @ VGS=10V Qg(typ.)=10.9nC RoHS C
Datasheet: MSF8N50 , MSF8N60 , MSF8N80 , MSF9N20 , MSF9N70 , MSF9N90 , MSK19N03 , MSK1N3 , 4435 , MSK2N60T , MSK4D5N60F , MSK4D5N60T , MSK4N80F , MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F .
Keywords - MSK2N60F MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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