IRFS635
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS635
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 35(max)
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68
Ohm
Package:
TO220F
IRFS635
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS635
Datasheet (PDF)
8.3. Size:859K 1
irf630b irfs630b.pdf 
IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
8.4. Size:858K fairchild semi
irfs634b.pdf
November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to
8.5. Size:859K fairchild semi
irf634b irfs634b.pdf
November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to
8.6. Size:508K samsung
irfs630a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
8.7. Size:505K samsung
irfs634a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
Datasheet: IRFS624
, IRFS624A
, IRFS625
, IRFS630
, IRFS630A
, IRFS632
, IRFS634
, IRFS634A
, IRF2807
, IRFS640
, IRFS640A
, IRFS642
, IRFS644
, IRFS644A
, IRFS645
, IRFS650A
, IRFS654A
.
