IRFS635 Datasheet and Replacement
Type Designator: IRFS635
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35(max) nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO220F
IRFS635 Datasheet (PDF)
irf630b irfs630b.pdf

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
Datasheet: IRFS624 , IRFS624A , IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , 20N50 , IRFS640 , IRFS640A , IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A .
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