All MOSFET. IRFS635 Datasheet

 

IRFS635 Datasheet and Replacement


   Type Designator: IRFS635
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 35(max) nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO220F
 

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IRFS635 Datasheet (PDF)

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IRFS635

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IRFS635

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IRFS635

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IRFS635

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

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Datasheet: IRFS624 , IRFS624A , IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , AO3400 , IRFS640 , IRFS640A , IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A .

Keywords - IRFS635 MOSFET datasheet

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