MSK4D5N60F Datasheet and Replacement
Type Designator: MSK4D5N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
MSK4D5N60F substitution
MSK4D5N60F Datasheet (PDF)
msk4d5n60f msk4d5n60t.pdf
600V/4.5A N-Channel MOSFET MSK4D5N60T/F600V/4.5A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220Features VDSS=600V, ID=4.5A; Low Drain-Source ON Resistance: RDS(ON) =2.5 @ VGS=10V Qg(typ.)=17nC RoHS C
Datasheet: MSF8N80 , MSF9N20 , MSF9N70 , MSF9N90 , MSK19N03 , MSK1N3 , MSK2N60F , MSK2N60T , SKD502T , MSK4D5N60T , MSK4N80F , MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F , MSK7N80T , MSK9N50F .
Keywords - MSK4D5N60F MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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