MSK4D5N60F Datasheet. Specs and Replacement

Type Designator: MSK4D5N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220F

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MSK4D5N60F datasheet

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MSK4D5N60F

600V/4.5A N-Channel MOSFET MSK4D5N60T/F 600V/4.5A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220 Features VDSS=600V, ID=4.5A; Low Drain-Source ON Resistance RDS(ON) =2.5 @ VGS=10V Qg(typ.)=17nC RoHS C... See More ⇒

Detailed specifications: MSF8N80, MSF9N20, MSF9N70, MSF9N90, MSK19N03, MSK1N3, MSK2N60F, MSK2N60T, SKD502T, MSK4D5N60T, MSK4N80F, MSK4N80T, MSK7D5N60F, MSK7D5N60T, MSK7N80F, MSK7N80T, MSK9N50F

Keywords - MSK4D5N60F MOSFET specs

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