All MOSFET. MSK4D5N60F Datasheet

 

MSK4D5N60F MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSK4D5N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F

 MSK4D5N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSK4D5N60F Datasheet (PDF)

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 msk4d5n60f msk4d5n60t.pdf

MSK4D5N60F MSK4D5N60F

600V/4.5A N-Channel MOSFET MSK4D5N60T/F600V/4.5A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for switching mode power supplies TO-220Features VDSS=600V, ID=4.5A; Low Drain-Source ON Resistance: RDS(ON) =2.5 @ VGS=10V Qg(typ.)=17nC RoHS C

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: HSP6115 | ZXMP7A17G | NCE60P16AK | IRF7705 | NCE60P02Y

 

 
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