IRFS640 Specs and Replacement

Type Designator: IRFS640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 max nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220F

IRFS640 substitution

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IRFS640 datasheet

 ..1. Size:301K  1
 irfs640 irfs641.pdf pdf_icon

IRFS640

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 0.1. Size:916K  fairchild semi
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IRFS640

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 0.2. Size:922K  fairchild semi
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IRFS640

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 0.3. Size:508K  samsung
 irfs640a.pdf pdf_icon

IRFS640

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

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Detailed specifications: IRFS624A, IRFS625, IRFS630, IRFS630A, IRFS632, IRFS634, IRFS634A, IRFS635, IRFP450, IRFS640A, IRFS642, IRFS644, IRFS644A, IRFS645, IRFS650A, IRFS654A, IRFS710A

Keywords - IRFS640 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.