All MOSFET. MSP2301N3 Datasheet

 

MSP2301N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSP2301N3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-23

 MSP2301N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSP2301N3 Datasheet (PDF)

 ..1. Size:1196K  bruckewell
 msp2301n3.pdf

MSP2301N3 MSP2301N3

Bruckewell Technology Corp., Ltd. http://www.bruckewell.com/semicon 20V P-CHANNEL Enhancement Mode MOSFETProduct Specification MSP2301N3 FEATURES: VDS=-20V RDS(ON)=130m@VGS=-4.5V, IDS=-2.8A RDS(ON)=190m@VGS=-2.5V, VDS=-20V RDS(ON)=130m@VGS=-4.5V, IDS=-2A Advanced trench process technology IDS=-2.8A RDS(ON)=190m@VGS=-2.5V, High density cell design

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top