All MOSFET. MSP2301N3 Datasheet

 

MSP2301N3 Datasheet and Replacement


   Type Designator: MSP2301N3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-23
 

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MSP2301N3 Datasheet (PDF)

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MSP2301N3

Bruckewell Technology Corp., Ltd. http://www.bruckewell.com/semicon 20V P-CHANNEL Enhancement Mode MOSFETProduct Specification MSP2301N3 FEATURES: VDS=-20V RDS(ON)=130m@VGS=-4.5V, IDS=-2.8A RDS(ON)=190m@VGS=-2.5V, VDS=-20V RDS(ON)=130m@VGS=-4.5V, IDS=-2A Advanced trench process technology IDS=-2.8A RDS(ON)=190m@VGS=-2.5V, High density cell design

Datasheet: MSK4N80T , MSK7D5N60F , MSK7D5N60T , MSK7N80F , MSK7N80T , MSK9N50F , MSK9N50T , MSP02N10 , NCEP15T14 , MSQ27N30 , MSQ2N60 , MSQ4N60 , MSQ5N50 , MSQ6N30 , MSQ6N40 , MSQ7434N , MSQ94P33 .

History: FDV301NNB9V005 | 65N06A

Keywords - MSP2301N3 MOSFET datasheet

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