MSQ2N60 Datasheet. Specs and Replacement

Type Designator: MSQ2N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: QFN5X6

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MSQ2N60 datasheet

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MSQ2N60

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ2N60 Description The MSQ2N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which ... See More ⇒

Detailed specifications: MSK7D5N60T, MSK7N80F, MSK7N80T, MSK9N50F, MSK9N50T, MSP02N10, MSP2301N3, MSQ27N30, STP80NF70, MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N, MSQ94P33, MSQ99N26, MSS34N40

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