All MOSFET. MSQ2N60 Datasheet

 

MSQ2N60 Datasheet and Replacement


   Type Designator: MSQ2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: QFN5X6
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MSQ2N60 Datasheet (PDF)

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MSQ2N60

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ2N60 Description The MSQ2N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which

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History: STC5NF20V | CED05N8 | BUZ84 | IRFHM792PBF | NDP708B | AON6794 | BL10N70-A

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