MSQ4N60 Datasheet. Specs and Replacement

Type Designator: MSQ4N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: QFN5X6

  📄📄 Copy 

MSQ4N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

MSQ4N60 datasheet

 ..1. Size:287K  bruckewell
 msq4n60.pdf pdf_icon

MSQ4N60

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ4N60 Description The MSQ4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which ... See More ⇒

Detailed specifications: MSK7N80F, MSK7N80T, MSK9N50F, MSK9N50T, MSP02N10, MSP2301N3, MSQ27N30, MSQ2N60, IRFP450, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N, MSQ94P33, MSQ99N26, MSS34N40, MSS5P05D

Keywords - MSQ4N60 MOSFET specs

 MSQ4N60 cross reference

 MSQ4N60 equivalent finder

 MSQ4N60 pdf lookup

 MSQ4N60 substitution

 MSQ4N60 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.