All MOSFET. MSQ4N60 Datasheet

 

MSQ4N60 Datasheet and Replacement


   Type Designator: MSQ4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: QFN5X6
 

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MSQ4N60 Datasheet (PDF)

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MSQ4N60

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ Product Specification PRELIMINARY N-Channel Enhancement Mode Power MOSFET MSQ4N60 Description The MSQ4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The QFN-5X6 package which

Datasheet: MSK7N80F , MSK7N80T , MSK9N50F , MSK9N50T , MSP02N10 , MSP2301N3 , MSQ27N30 , MSQ2N60 , IRF1407 , MSQ5N50 , MSQ6N30 , MSQ6N40 , MSQ7434N , MSQ94P33 , MSQ99N26 , MSS34N40 , MSS5P05D .

History: MSQ2N60

Keywords - MSQ4N60 MOSFET datasheet

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