MSQ94P33 Datasheet. Specs and Replacement

Type Designator: MSQ94P33  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOIC-8

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MSQ94P33 datasheet

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MSQ94P33

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. SOIC-8 Package MSQ94P33 P-Channel 20-V (D-S) MOSFET Key Features These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powere... See More ⇒

Detailed specifications: MSP2301N3, MSQ27N30, MSQ2N60, MSQ4N60, MSQ5N50, MSQ6N30, MSQ6N40, MSQ7434N, IRFP250, MSQ99N26, MSS34N40, MSS5P05D, MSS5P05U, MSU11N50Q, MSU12N60F, MSU12N60T, MSU18N40

Keywords - MSQ94P33 MOSFET specs

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