MSQ94P33 MOSFET. Datasheet pdf. Equivalent
Type Designator: MSQ94P33
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 8.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOIC-8
MSQ94P33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSQ94P33 Datasheet (PDF)
msq94p33.pdf
Preliminary Data Sheet Bruckewell Technology Corp., Ltd. SOIC-8 Package MSQ94P33 P-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powere
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