All MOSFET. MSQ94P33 Datasheet

 

MSQ94P33 Datasheet and Replacement


   Type Designator: MSQ94P33
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOIC-8
 

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MSQ94P33 Datasheet (PDF)

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MSQ94P33

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. SOIC-8 Package MSQ94P33 P-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powere

Datasheet: MSP2301N3 , MSQ27N30 , MSQ2N60 , MSQ4N60 , MSQ5N50 , MSQ6N30 , MSQ6N40 , MSQ7434N , STF13NM60N , MSQ99N26 , MSS34N40 , MSS5P05D , MSS5P05U , MSU11N50Q , MSU12N60F , MSU12N60T , MSU18N40 .

History: SJMN600R65B | SJMN600R60D | MTB5D0P03J3

Keywords - MSQ94P33 MOSFET datasheet

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