MSS34N40 Datasheet and Replacement
Type Designator: MSS34N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: SOIC-8PP
MSS34N40 Datasheet (PDF)
mss34n40.pdf

PRELIMINARY Bruckewell Technology Corp., Ltd. MSS34N40 N-Channel 40-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PRELIMI
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