MSS34N40 Specs and Replacement
Type Designator: MSS34N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: SOIC-8PP
MSS34N40 substitution
- MOSFET ⓘ Cross-Reference Search
MSS34N40 datasheet
mss34n40.pdf
PRELIMINARY Bruckewell Technology Corp., Ltd. MSS34N40 N-Channel 40-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PRELIMI... See More ⇒
Detailed specifications: MSQ2N60 , MSQ4N60 , MSQ5N50 , MSQ6N30 , MSQ6N40 , MSQ7434N , MSQ94P33 , MSQ99N26 , 2SK3568 , MSS5P05D , MSS5P05U , MSU11N50Q , MSU12N60F , MSU12N60T , MSU18N40 , MSU1N60T , MSU1N60F .
Keywords - MSS34N40 MOSFET specs
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