All MOSFET. MSU11N50Q Datasheet

 

MSU11N50Q Datasheet and Replacement


   Type Designator: MSU11N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-262
 

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MSU11N50Q Datasheet (PDF)

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MSU11N50Q

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu

Datasheet: MSQ6N30 , MSQ6N40 , MSQ7434N , MSQ94P33 , MSQ99N26 , MSS34N40 , MSS5P05D , MSS5P05U , SKD502T , MSU12N60F , MSU12N60T , MSU18N40 , MSU1N60T , MSU1N60F , MSU1N60D , MSU1N60U , MSU2N60T .

History: APQ02SN60A | RCX300N20 | TPA60R260MFD | STD2NK90ZT4 | WMM22N50C4

Keywords - MSU11N50Q MOSFET datasheet

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