MSU11N50Q Datasheet. Specs and Replacement

Type Designator: MSU11N50Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-262

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MSU11N50Q datasheet

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MSU11N50Q

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu... See More ⇒

Detailed specifications: MSQ6N30, MSQ6N40, MSQ7434N, MSQ94P33, MSQ99N26, MSS34N40, MSS5P05D, MSS5P05U, RFP50N06, MSU12N60F, MSU12N60T, MSU18N40, MSU1N60T, MSU1N60F, MSU1N60D, MSU1N60U, MSU2N60T

Keywords - MSU11N50Q MOSFET specs

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