All MOSFET. MSU11N50Q Datasheet

 

MSU11N50Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSU11N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-262

 MSU11N50Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSU11N50Q Datasheet (PDF)

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 msu11n50q.pdf

MSU11N50Q MSU11N50Q

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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